Quantized topological surface states promise a quantum Hall state in topological insulators
نویسندگان
چکیده
The prediction [1] and experimental discovery [2, 3] of a class of materials known as topological insulators is a major recent event in the condensed matter physics community. Why do twoand three-dimensional topological insulators (such as HgTe/CdTe [2] and Bi2Se3 [3], respectively) attract so much interest? Thinking practically, these materials open a rich vista of possible applications and devices based on the unique interplay between spin and charge. More fundamentally, there is much to enjoy from a physics point of view, including the aesthetic spin-resolved Fermi surface topology [3], the possibility of hosting Majorana fermions (a fermion that is its own antiparticle) in a solid-state system [4], and the intrinsic quantum spin Hall effect, which can be thought of as two copies of the quantum Hall effect for spin-up and spin-down electrons [5]. Now, an exciting new addition to the above list comes from two teams that are reporting the first experimental observation of quantized topological surface states forming Landau levels in the presence of a magnetic field. The two papers one appearing in Physical Review Letters by Peng Cheng and colleagues at Tsinghua University in China, and collaborators in the US, the other, appearing as a Rapid Communication in Physical Review B, by Tetsuo Hanaguri at Japan’s RIKEN Advanced Science Institute in Wako and scientists at the Tokyo Institute of Technology pave the way for seeing a quantum Hall effect in topological insulators.
منابع مشابه
Topological Insulators a.k.a Quantum Spin Hall E ect
The recent experimental realization of a the quantum spin hall e ect has caused a lot of interest in these topological states of matter. Topological insulators are a new form of condensed matter that are not characterized by a spontaneously broken symmetry. Instead the materials are characterized by topology of the manifold of the occupied bloch states. Topological insulators have the unique pr...
متن کاملColloquium: Topological Insulators
Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducted states on their edge or surface. These states are possible due to the combination of spinorbit interactions and time-reversal symmetry. The two-dimensional (2D) topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hal...
متن کامل1 4 N ov 2 01 0 Fractional topological insulators in three dimensions
Topological insulators can be generally defined by a topological field theory with an axion angle θ of 0 or π. In this work, we introduce the concept of fractional topological insulator defined by a fractional axion angle and show that it can be consistent with time reversal (T ) invariance if ground state degeneracies are present. The fractional axion angle can be measured experimentally by th...
متن کاملTopological insulators and superconductors - Notes of TKMI 2013/2014 guest lectures
IV. Quantum anomalous Hall effect in a T -violating topological insulator model 10 A. 1d model 10 B. 2d model 12 C. Quantized Hall conductivity of the 2d bulk system topological invariant 13 1. Bulk eigen-states 13 2. Coupling to an external constant electric field Adiabatic eigen-states 14 3. Time-dependent perturbation theory based on adiabatic eigen-states 14 4. Adiabatic current 15 5. Hall ...
متن کاملElectronic states of wires and slabs of topological insulators : Quantum Hall effects and edge transport
We develop a simple model of surface states for topological insulators, developing matching relations for states on surfaces of different orientations. The model allows one to write simple Dirac Hamiltonians for each surface, and to determine how perturbations that couple to electron spin impact them. We then study two specific realizations of such systems: quantum wires of rectangular cross-se...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2010